SSD M.2 1TB SAMSUNG 990 EVO PLUS NVMe PCIe Gen5 7.150/6.300MB/s MZ-V9S1T0BW

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Model name: SAMSUNG 990 EVO PLUS Specification : Form Factor M.2 (2280) Interface PCIe® 4.0 x4 / 5.0 x2 NVMe™ 2.0 Storage Memory Samsung V-NAND TLC Controller Samsung in-house Controller Cache Memory HMB (Host Memory Buffer) RIM Support Supported S.M.A.R.T Support Supported GC (Garbage Collection) Auto Garbage Collection Algorithm Encryption Support AES 256-bit Encryption (Class 0) TCG/Opal IEEE1667 (Encrypted drive) WWN Support Not supported Device Sleep Mode Support Yes Sequential Read Up to 7,150MB/s* Sequential Write Up to 6,300MB/s* Random Read (4KB, QD32) Up to 850,000 IOPS* Performance may vary based on system hardware & configuration Random Write (4KB, QD32) Up to 1,350,000 IOPS* Performance may vary based on system hardware & configuration Average Power Consumption (system level) Average: Read 4.3 W / Write 4.2 W* Actual power consumption may vary depending on system hardware & configuration Power consumption (Idle) Typical 60 mW* Actual power consumption may vary depending on system hardware & configuration Power Consumption (Device Sleep) Typical 5 mW* Actual power consumption may vary depending on system hardware & configuration Allowable Voltage 3.3 V ± 5 % Allowable voltage Reliability (MTBF) 1.5 Million Hours Reliability (MTBF) Operating Temperature 0 - 70 ℃ Operating Temperature Shock 1,500 G & 0.5 ms (Half sine)